Sputtering

The PVD SPUTTERING methodology, from which derives the name of the company, is an even more innovative process than the classic PVD, because it allows so far unthinkable applications and uses. You have only to think that the well-known aesthetic and physical properties, obtained by Plasma PVD processes, now are reached at room or little higher temperature and with a considerably wider range of applicable materials. The PVD SPUTTERING processes allow a nearly unlimited production of depositions on any kind of surface. The most used metals and alloys are: Chrome, Aluminium, Steel, Titanium, Copper, Brass and those given in the table.

The PVD SPUTTERING is the cleanest technology of any other technique of covering and offers a combination of advantages that hasn’t equals: first of all, it’s an economically efficient deposition method that produces as thin and uniform covering as possible, then, it’s a dry process carried out at low temperature. It builds an indestructible bond between the film and the substratum, because it welds them together at molecular level. It offers a great versatility in comparison with other coverings, because, as it’s a cold transfer, it can be used to deposit conductive or insulating materials on every kind of substratum, including metals, baked clay, glass and plastic materials, sensitive to temperatures. Besides, the process has an automatically repeatable control of deposition. The covering material is put in the vacuum chamber as cathode disguised as metallic plate. After the vacuum is created in the chamber, the process gas (argon is usually used because of its high atomic weight) is inserted and an high voltage is applied. The argon cations undergo the acceleration process on the negative cathode and, then, sputter the atoms of the metallic plate (evaporating material), that deposit on the substrata of the objects already present in the chamber and condense there.

The impact of the atoms on the evaporating material produces “Sputtering” as result of the acceleration given by the incoming particle. Unlike many other techniques of deposition in the vacuum, in this case there isn’t a fusion of material, so all the metals and the alloys can be deposited with high efficiency and under rigorous control. If a reagent gas, for example nitrogen o acetylene, is put in the chamber, in addition to the process gas, the nitride reagent to the carbide develops on the substrata. Different cathodes constituded by different materials can be put in the same system of covering in the vacuum and, so, absolutely original multi-stratum depositions can be obtained. The combination of every substratum can be modified changing the one of the reagent gases.

Plasma PE-CVD

The growth of thin films on a surface can be effectively carried out through Chemical Vapour Deposition of compounds containing the deposition element. The PE-CVD technique allows to deposit innumerable materials by changing the process parameters, the forerunners and the shape of the reactor. In this way, so far unthinkable results of greater superficial hardness, low friction coefficient, anti-corrosiveness, anti-scratch, anti-printing, anti-adhesion, bio-compatibility and transparence can be achieved. We can develop highly innovative and unique processes, in close collaboration with the interested customers.

Plasma Cleaning

The PLASMA in the vacuum of special gases, among which the oxygen is always necessarily present, that are in contact with the surfaces to clean, allows the development of a low temperature (close to room temperature) oxidation, that’s to say the formation of functional groups on the surfaces, which create the optimum conditions to obtain their perfect and micrometric cleaning. The PLASMA is suitable to clean surfaces of any nature, geometry and size and to modify their superficial characteristics, both chemical and electrostatic, without the use of wash products. The organic remains are removed, the superficial tension, and so the wettability, is increased and the adherence of paints, adhesives, inks and decorations are improved.